格林公式的教学探究

首先通过一个热点问题和两个计算题引出学习格林公式的目的和必要性,迅速抓住学生的兴趣点,从第二型曲线积分入手,通过逐步分析操作给出前提条件,并最终得到公式,打破了书上的传统推导模式.     

Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Phase-Transition and Magnetic Moment of the Gd3+ Ion in the Gd2Fe17 Compound

The structure and magnetic phase transitions of the Gd2Fe17 compound are investigated by using a differential thermal/thermogravimetric analyzer, x-ray diffraction, and magnetization measurements. The result shows that there are two phase structures for the Gd2Fe17 compound： the hexagonal Th2Nilr-type structure at high temperatures （above 1243℃）, and the rhombohedral Th2Zn17-type structure, respectively. A method to measure the magnetic moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound is presented. The moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound from 77 to 500 K are measured in this way with a vibrating sample magnetometer. A detailed discussion is presented.     

Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires

We report a preferential growth of boron carbide nanowires with a five-fold twinned internal structure. The nanowires are found to grow catalytically via iron boron nanoparticles, but unusually the catalytic particle is in contact with the low-energy surfaces of boron carbide with V-shaped contact lines. We propose that this catalytical growth may be caused by preferential nucleation at the re-entrant grooves due to the twinning planes, followed by rapid spreading of atomic steps. This is consistent with the observed temperature dependence of the five-fold twinned nanowire growth.     

中小口径双非球面数控抛光技术研究

针对口径Φ62 mm双凸非球面透镜,进行了数控研磨和抛光技术研究.提出了规范性的加工工艺流程,实现了中小口径双非球面元件的高效、快速抛光.根据计算机控制光学表面成型技术,采用全口径抛光和小抛头修抛的两步抛光法,在抛光中对其面形误差进行多次反馈补偿,使被加工零件表面的面形精度逐步收敛.最终两面的面形精度均小于0.5 μm,中心偏差小于0.01 mm,满足了光学系统中对非球面元件的精度要求,并且在保证有较高面形精度和较好表面光洁度的同时,解决了双非球面中心偏差和中心厚度难以控制的加工技术难题.     

环氧大豆油与丙交酯星形共聚物支化度的表征

采用凝胶色谱(GPC)/示差检测器(RI)/十八角激光光散射仪(MALLS)联用技术, 对环氧大豆油(ESO)与丙交酯形成的星形共聚物(ESO-丙交酯)的结构进行了表征。实验结果表明: 随着ESO-丙交酯星形共聚物分子量的增长, 接枝数目呈现增多趋势、支化度从0.46E-4增大到0.78E-4、支化因子从0.82减小到0.15。本研究为高分子ESO-丙交酯星形支化共聚物的研究提供了科学依据。     

9SNCR烟气脱硝工艺及CH4作添加剂的试验研究

本文介绍了在自行研制的选择性非催化还原(SNCR)烟气脱硝试验台上采用改进型TB系列喷嘴深入烟道内部逆流喷入的方式,进行了冷态混合试验和气态氨作还原剂及CH4作添加剂的热态脱硝试验.深入烟道内部的喷入方式在提高喷入气体与烟道主气流的混合效果上明显优于侧壁圆孔喷入.在NH3/NOx=1.25,反应温度为925℃时可得到82.53%的脱硝效率,有CH4作添加剂时,温度为875℃时可得到72.37%的脱硝效率.以NOx去除率高于50%为标准,温度窗口为863～937℃;有CH4作添加剂的温度窗口为803～929℃.随着氨氮比的增大NOx去除效率也增大,但在最优温度下当氨氮比大于1.0后NOx去除率的增大不再明显.随着温度的升高,达到NOx最大去除率所需的CH4添加量减小,CH4作添加剂可大大减小氨的泄漏量.     

Breather Lattice Solutions to Negative mKdV Equation

In this paper, dependent and independent variable transformations are introduced to solve the negative mKdV equation systematically by using the knowledge of elliptic equation and Jacobian elliptic functions. It is shown that different kinds of solutions can be obtained to the negative mKdV equation, including breather lattice solution and periodic wave solution.     

Introduction to the overall physics design of CSNS accelerators

The China Spallation Neutron Source (CSNS) is an accelerator-based facility. The